BSZ0910NDXTMA1 Pagpepresyo (USD) [171885pcs Stock]
- 1 pcs$0.21519
- Bilang ng Bahagi:
- BSZ0910NDXTMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- DIFFERENTIATED MOSFETS.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Mga Transistor - FET, MOSFET - RF, Thyristors - DIACs, SIDACs, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Zener - Arrays, Diode - RF, Transistor - Espesyal na Pakay and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSZ0910NDXTMA1 electronic components. BSZ0910NDXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0910NDXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0910NDXTMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSZ0910NDXTMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
DIFFERENTIATED MOSFETS
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate, 4.5V Drive
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 15V
Kapangyarihan - Max :
1.9W (Ta), 31W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
PG-WISON-8
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