DMTH10H010SCT Pagpepresyo (USD) [68703pcs Stock]
- 1 pcs$0.56912
- Bilang ng Bahagi:
- DMTH10H010SCT
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET BVDSS 61V-100V TO220AB T.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga SCR, Diode - Rectifiers - Arrays, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMTH10H010SCT electronic components. DMTH10H010SCT can be shipped within 24 hours after order. If you have any demands for DMTH10H010SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH10H010SCT Mga katangian ng produkto
Bilang ng Bahagi :
DMTH10H010SCT
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET BVDSS 61V-100V TO220AB T
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
56.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4468pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 187W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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