TK12E60W,S1VX Pagpepresyo (USD) [37786pcs Stock]
- 1 pcs$1.20585
- 50 pcs$1.19985
- Bilang ng Bahagi:
- TK12E60W,S1VX
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N CH 600V 11.5A TO-220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK12E60W,S1VX electronic components. TK12E60W,S1VX can be shipped within 24 hours after order. If you have any demands for TK12E60W,S1VX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12E60W,S1VX Mga katangian ng produkto
Bilang ng Bahagi :
TK12E60W,S1VX
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N CH 600V 11.5A TO-220
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 300V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
110W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220
Pakete / Kaso :
TO-220-3
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