IRFD113PBF Pagpepresyo (USD) [39129pcs Stock]
- 1 pcs$0.99926
- 2,500 pcs$0.43461
- Bilang ng Bahagi:
- IRFD113PBF
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 800MA 4-DIP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga SCR, Diode - Zener - Arrays, Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix IRFD113PBF electronic components. IRFD113PBF can be shipped within 24 hours after order. If you have any demands for IRFD113PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD113PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFD113PBF
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 60V 800MA 4-DIP
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
800mA (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
800 mOhm @ 800mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
4-HVMDIP
Pakete / Kaso :
4-DIP (0.300", 7.62mm)
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