CSD18510KTT Pagpepresyo (USD) [71171pcs Stock]
- 1 pcs$0.59048
- 500 pcs$0.58754
- Bilang ng Bahagi:
- CSD18510KTT
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- GEN1.4 40V-20V.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Transistor - IGBTs - Arrays, Diode - Rectifiers - Arrays, Diode - Zener - Arrays and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD18510KTT electronic components. CSD18510KTT can be shipped within 24 hours after order. If you have any demands for CSD18510KTT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD18510KTT Mga katangian ng produkto
Bilang ng Bahagi :
CSD18510KTT
Tagagawa :
Texas Instruments
Paglalarawan :
GEN1.4 40V-20V
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
274A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
153nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
11400pF @ 20V
Tampok ng FET :
-
Power Dissipation (Max) :
250W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DDPAK/TO-263-3
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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