ON Semiconductor - 1N4454

KEY Part #: K6458691

1N4454 Pagpepresyo (USD) [7422335pcs Stock]

  • 1 pcs$0.00498
  • 50,000 pcs$0.00465

Bilang ng Bahagi:
1N4454
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
DIODE GEN PURP 50V 200MA DO35. Diodes - General Purpose, Power, Switching Vr/75V Io/200mA BULK
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCR - Mga Module, Transistor - Programmable Unijunction, Mga Transistor - FET, MOSFET - RF and Diode - Rectifiers - Arrays ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor 1N4454 electronic components. 1N4454 can be shipped within 24 hours after order. If you have any demands for 1N4454, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4454 Mga katangian ng produkto

Bilang ng Bahagi : 1N4454
Tagagawa : ON Semiconductor
Paglalarawan : DIODE GEN PURP 50V 200MA DO35
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 50V
Kasalukuyang - Average na Rectified (Io) : 200mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 10mA
Bilis : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Kasalukuyang - Reverse Leakage @ Vr : 100nA @ 50V
Capacitance @ Vr, F : 4pF @ 0V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-204AH, DO-35, Axial
Package ng Tagabigay ng Device : DO-35
Operating temperatura - Junction : 175°C (Max)

Maaari ka ring Makisalamuha sa
  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode

  • BAL99E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode