BAL99E6327HTSA1 Pagpepresyo (USD) [4027624pcs Stock]
- 1 pcs$0.01373
- 3,000 pcs$0.01366
- Bilang ng Bahagi:
- BAL99E6327HTSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Diode - Zener - Arrays, Thyristors - DIACs, SIDACs, Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BAL99E6327HTSA1 electronic components. BAL99E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BAL99E6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAL99E6327HTSA1 Mga katangian ng produkto
Bilang ng Bahagi :
BAL99E6327HTSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
DIODE GEN PURP 80V 250MA SOT23-3
Serye :
-
Katayuan ng Bahagi :
Last Time Buy
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
80V
Kasalukuyang - Average na Rectified (Io) :
250mA (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.25V @ 150mA
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
4ns
Kasalukuyang - Reverse Leakage @ Vr :
1µA @ 70V
Capacitance @ Vr, F :
1.5pF @ 0V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device :
SOT-23-3
Operating temperatura - Junction :
-65°C ~ 150°C
Pinakabagong Balita
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BAL99E6327HTSA1
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DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
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