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  5. FQU2N100TU

ON Semiconductor - FQU2N100TU

KEY Part #: K6409471

FQU2N100TU Pagpepresyo (USD) [75420pcs Stock]

  • 1 pcs$0.51844
  • 5,040 pcs$0.17682
Bilang ng Bahagi:
FQU2N100TU
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET N-CH 1000V 1.6A IPAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - Rectifiers - Single, Transistors - IGBTs - Single, Diode - Zener - Single, Mga Transistor - Bipolar (BJT) - RF, Mga module ng Power driver, Diode - Mga Rectifier ng Bridge and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FQU2N100TU electronic components. FQU2N100TU can be shipped within 24 hours after order. If you have any demands for FQU2N100TU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQU2N100TU Mga katangian ng produkto

Bilang ng Bahagi : FQU2N100TU
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET N-CH 1000V 1.6A IPAK
Serye : QFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 1.6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15.5nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 2.5W (Ta), 50W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : I-PAK
Pakete / Kaso : TO-251-3 Short Leads, IPak, TO-251AA

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