Bilang ng Bahagi :
SCTW90N65G2V
Tagagawa :
STMicroelectronics
Paglalarawan :
SILICON CARBIDE POWER MOSFET 650
Katayuan ng Bahagi :
Active
Teknolohiya :
SiCFET (Silicon Carbide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
90A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 50A, 18V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds :
3300pF @ 400V
Power Dissipation (Max) :
390W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 200°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
HiP247™