RQ3E100GNTB Pagpepresyo (USD) [674757pcs Stock]
- 1 pcs$0.06060
- 3,000 pcs$0.06030
- Bilang ng Bahagi:
- RQ3E100GNTB
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 10A 8-HSMT.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Thyristors - SCR - Mga Module, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Transistor - Espesyal na Pakay, Thyristors - Mga TRIAC, Diode - Rectifiers - Arrays and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor RQ3E100GNTB electronic components. RQ3E100GNTB can be shipped within 24 hours after order. If you have any demands for RQ3E100GNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E100GNTB Mga katangian ng produkto
Bilang ng Bahagi :
RQ3E100GNTB
Tagagawa :
Rohm Semiconductor
Paglalarawan :
MOSFET N-CH 30V 10A 8-HSMT
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11.7 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
7.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
420pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta), 15W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-HSMT (3.2x3)
Pakete / Kaso :
8-PowerVDFN
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