IXTY01N100D Pagpepresyo (USD) [37709pcs Stock]
- 1 pcs$1.20311
- 10 pcs$1.03020
- 100 pcs$0.82784
- 500 pcs$0.64387
- 1,000 pcs$0.53350
- Bilang ng Bahagi:
- IXTY01N100D
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 0.1A TO-252AA.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Diode - RF, Diode - Zener - Arrays, Transistor - Espesyal na Pakay, Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Arrays and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTY01N100D electronic components. IXTY01N100D can be shipped within 24 hours after order. If you have any demands for IXTY01N100D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY01N100D Mga katangian ng produkto
Bilang ng Bahagi :
IXTY01N100D
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 0.1A TO-252AA
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100mA (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
110 Ohm @ 50mA, 0V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Tampok ng FET :
Depletion Mode
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252, (D-Pak)
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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