IPD30N12S3L31ATMA1 Pagpepresyo (USD) [183302pcs Stock]
- 1 pcs$0.20178
- 2,500 pcs$0.16463
- Bilang ng Bahagi:
- IPD30N12S3L31ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL100.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Diode - RF, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Arrays, Mga Transistor - FET, MOSFET - RF and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPD30N12S3L31ATMA1 electronic components. IPD30N12S3L31ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD30N12S3L31ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD30N12S3L31ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPD30N12S3L31ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CHANNEL100
Serye :
*
Katayuan ng Bahagi :
Active
Uri ng FET :
-
Teknolohiya :
-
Drain sa Source Voltage (Vdss) :
-
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
-
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
-
Package ng Tagabigay ng Device :
-
Pakete / Kaso :
-
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