Bilang ng Bahagi :
FDC6561AN
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET 2N-CH 30V 2.5A SSOT6
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.5A
Rds On (Max) @ Id, Vgs :
95 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
220pF @ 15V
Kapangyarihan - Max :
700mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
Package ng Tagabigay ng Device :
SuperSOT™-6