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  5. K4A8G085WC-BCWE

Samsung Semiconductor - K4A8G085WC-BCWE

KEY Part #: K7359603

[21766pcs Stock]

    Bilang ng Bahagi:
    K4A8G085WC-BCWE
    Tagagawa:
    Samsung Semiconductor
    Detalyadong Paglalarawan:
    8 Gb 1G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: HBM Flarebolt, LPDDR5, LPDDR4, GDDR6, DDR3, LPDDR4X, MODULE and GDDR5 ...
    Kumpetensyang Pakinabang:
    We specialize in Samsung Semiconductor K4A8G085WC-BCWE electronic components. K4A8G085WC-BCWE can be shipped within 24 hours after order. If you have any demands for K4A8G085WC-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G085WC-BCWE Mga katangian ng produkto

    Bilang ng Bahagi : K4A8G085WC-BCWE
    Tagagawa : Samsung Semiconductor
    Paglalarawan : 8 Gb 1G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
    Serye : DDR4
    densidad : 8 Gb
    Org. : 1G x 8
    bilis : 3200 Mbps
    Boltahe : 1.2 V
    Temp. : 0 ~ 85 °C
    pakete : 78FBGA
    Katayuan ng produkto : Mass Production

    Pinakabagong Balita

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    Bringing Artificial Intelligence to Devices Everywhere
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    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Z-SSD SZ985
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Unlocking the Power of Cloud Computing
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    • K4A4G085WE-BITD

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      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

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      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

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      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

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