Samsung Semiconductor - K4A4G085WE-BITD

KEY Part #: K7359580

[20168pcs Stock]


    Bilang ng Bahagi:
    K4A4G085WE-BITD
    Tagagawa:
    Samsung Semiconductor
    Detalyadong Paglalarawan:
    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: LPDDR4X, LPDDR4, HBM Aquabolt, GDDR5, GDDR6, MODULE, SLC Nand and LPDDR3 ...
    Kumpetensyang Pakinabang:
    We specialize in Samsung Semiconductor K4A4G085WE-BITD electronic components. K4A4G085WE-BITD can be shipped within 24 hours after order. If you have any demands for K4A4G085WE-BITD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G085WE-BITD Mga katangian ng produkto

    Bilang ng Bahagi : K4A4G085WE-BITD
    Tagagawa : Samsung Semiconductor
    Paglalarawan : 4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production
    Serye : DDR4
    densidad : 4 Gb
    Org. : 512M x 8
    bilis : 2666 Mbps
    Boltahe : 1.2 V
    Temp. : -40 ~ 95 °C
    pakete : 78FBGA
    Katayuan ng produkto : Mass Production

    Maaari ka ring Makisalamuha sa
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.