TSM60NB190CZ C0G Pagpepresyo (USD) [33639pcs Stock]
- 1 pcs$1.22515
- Bilang ng Bahagi:
- TSM60NB190CZ C0G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL 600V 18A TO220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Single, Mga Transistor - JFET, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Pre-Biased and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation TSM60NB190CZ C0G electronic components. TSM60NB190CZ C0G can be shipped within 24 hours after order. If you have any demands for TSM60NB190CZ C0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB190CZ C0G Mga katangian ng produkto
Bilang ng Bahagi :
TSM60NB190CZ C0G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
MOSFET N-CHANNEL 600V 18A TO220
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
18A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1273pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
33.8W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220
Pakete / Kaso :
TO-220-3
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