CSD23202W10T Pagpepresyo (USD) [332910pcs Stock]
- 1 pcs$0.11110
- 250 pcs$0.10758
- 1,250 pcs$0.06035
- Bilang ng Bahagi:
- CSD23202W10T
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET P-CH 12V 2.2A 4DSBGA.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Espesyal na Pakay and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD23202W10T electronic components. CSD23202W10T can be shipped within 24 hours after order. If you have any demands for CSD23202W10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD23202W10T Mga katangian ng produkto
Bilang ng Bahagi :
CSD23202W10T
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET P-CH 12V 2.2A 4DSBGA
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
53 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.8nC @ 4.5V
Vgs (Max) :
-6V
Input Capacitance (Ciss) (Max) @ Vds :
512pF @ 6V
Tampok ng FET :
-
Power Dissipation (Max) :
1W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-DSBGA (1x1)
Pakete / Kaso :
4-UFBGA, DSBGA
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