APT9F100B Pagpepresyo (USD) [16750pcs Stock]
- 1 pcs$2.71999
- 94 pcs$2.70646
- Bilang ng Bahagi:
- APT9F100B
- Tagagawa:
- Microsemi Corporation
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 9A TO-247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays, Transistors - IGBTs - Single, Mga module ng Power driver, Diode - Mga Rectifier ng Bridge, Diode - Zener - Arrays, Diode - Zener - Single and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Microsemi Corporation APT9F100B electronic components. APT9F100B can be shipped within 24 hours after order. If you have any demands for APT9F100B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT9F100B Mga katangian ng produkto
Bilang ng Bahagi :
APT9F100B
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET N-CH 1000V 9A TO-247
Serye :
POWER MOS 8™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.6 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2606pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
337W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247 [B]
Pakete / Kaso :
TO-247-3
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