PMDPB80XP,115 Pagpepresyo (USD) [548511pcs Stock]
- 1 pcs$0.06777
- 3,000 pcs$0.06743
- Bilang ng Bahagi:
- PMDPB80XP,115
- Tagagawa:
- Nexperia USA Inc.
- Detalyadong Paglalarawan:
- MOSFET 2P-CH 20V 2.7A HUSON6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - IGBTs - Arrays, Thyristors - Mga SCR, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga TRIAC and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Nexperia USA Inc. PMDPB80XP,115 electronic components. PMDPB80XP,115 can be shipped within 24 hours after order. If you have any demands for PMDPB80XP,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB80XP,115 Mga katangian ng produkto
Bilang ng Bahagi :
PMDPB80XP,115
Tagagawa :
Nexperia USA Inc.
Paglalarawan :
MOSFET 2P-CH 20V 2.7A HUSON6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 P-Channel (Dual)
Tampok ng FET :
Logic Level Gate, 1.8V Drive
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.7A
Rds On (Max) @ Id, Vgs :
102 mOhm @ 2.7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
550pF @ 10V
Kapangyarihan - Max :
485mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-UDFN Exposed Pad
Package ng Tagabigay ng Device :
6-HUSON-EP (2x2)
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