Bilang ng Bahagi :
IPA65R1K5CEXKSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 650V TO220-3
Katayuan ng Bahagi :
Active
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs :
10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
225pF @ 100V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
30W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO220 Full Pack
Pakete / Kaso :
TO-220-3 Full Pack