STB11NM60FDT4 Pagpepresyo (USD) [30284pcs Stock]
- 1 pcs$1.36090
- 1,000 pcs$1.21144
- Bilang ng Bahagi:
- STB11NM60FDT4
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 11A D2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Diode - RF, Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge, Transistor - Espesyal na Pakay and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STB11NM60FDT4 electronic components. STB11NM60FDT4 can be shipped within 24 hours after order. If you have any demands for STB11NM60FDT4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB11NM60FDT4 Mga katangian ng produkto
Bilang ng Bahagi :
STB11NM60FDT4
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 600V 11A D2PAK
Serye :
FDmesh™
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
160W (Tc)
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D2PAK
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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