IPA65R1K0CEXKSA1 Pagpepresyo (USD) [81321pcs Stock]
- 1 pcs$0.42228
- 10 pcs$0.37504
- 100 pcs$0.28033
- 500 pcs$0.21740
- 1,000 pcs$0.17163
- Bilang ng Bahagi:
- IPA65R1K0CEXKSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V TO220-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Programmable Unijunction, Mga Transistor - FET, MOSFET - RF and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPA65R1K0CEXKSA1 electronic components. IPA65R1K0CEXKSA1 can be shipped within 24 hours after order. If you have any demands for IPA65R1K0CEXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA65R1K0CEXKSA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPA65R1K0CEXKSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 650V TO220-3
Serye :
CoolMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
7.2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
15.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
328pF @ 100V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
68W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO220 Full Pack
Pakete / Kaso :
TO-220-3 Full Pack
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