[12555pcs Stock]
- Bilang ng Bahagi:
- IRLI530N
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 12A TO220FP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - IGBTs - Arrays, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga SCR, Mga module ng Power driver, Transistors - IGBTs - Single and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRLI530N electronic components. IRLI530N can be shipped within 24 hours after order. If you have any demands for IRLI530N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLI530N Mga katangian ng produkto
Bilang ng Bahagi :
IRLI530N
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 100V 12A TO220FP
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
41W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB Full-Pak
Pakete / Kaso :
TO-220-3 Full Pack
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