Microsemi Corporation - 1N5806US

KEY Part #: K6441669

1N5806US Pagpepresyo (USD) [10333pcs Stock]

  • 1 pcs$4.22191
  • 10 pcs$3.80016
  • 25 pcs$3.46249
  • 100 pcs$3.12461
  • 250 pcs$2.87127
  • 500 pcs$2.61793

Bilang ng Bahagi:
1N5806US
Tagagawa:
Microsemi Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 150V 1A D5A. Rectifiers D MET 2.5A SFST 150V SRFC MNT
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga TRIAC, Transistors - IGBTs - Single and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in Microsemi Corporation 1N5806US electronic components. 1N5806US can be shipped within 24 hours after order. If you have any demands for 1N5806US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5806US Mga katangian ng produkto

Bilang ng Bahagi : 1N5806US
Tagagawa : Microsemi Corporation
Paglalarawan : DIODE GEN PURP 150V 1A D5A
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 150V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 875mV @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 150V
Capacitance @ Vr, F : 25pF @ 10V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SQ-MELF, A
Package ng Tagabigay ng Device : D-5A
Operating temperatura - Junction : -65°C ~ 175°C

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