Bilang ng Bahagi :
APTM120H29FG
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET 4N-CH 1200V 34A SP6
Katayuan ng Bahagi :
Active
Uri ng FET :
4 N-Channel (H-Bridge)
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
34A
Rds On (Max) @ Id, Vgs :
348 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs :
374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
10300pF @ 25V
Kapangyarihan - Max :
780W
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SP6