BUZ30AHXKSA1 Pagpepresyo (USD) [38804pcs Stock]
- 1 pcs$1.00762
- Bilang ng Bahagi:
- BUZ30AHXKSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 21A TO220-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Thyristors - Mga SCR, Diode - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Mga Module, Transistors - IGBTs - Single and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BUZ30AHXKSA1 electronic components. BUZ30AHXKSA1 can be shipped within 24 hours after order. If you have any demands for BUZ30AHXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUZ30AHXKSA1 Mga katangian ng produkto
Bilang ng Bahagi :
BUZ30AHXKSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 200V 21A TO220-3
Serye :
SIPMOS®
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
21A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
125W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PG-TO220-3
Pakete / Kaso :
TO-220-3
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