IRLI640GPBF Pagpepresyo (USD) [26568pcs Stock]
- 1 pcs$1.39702
- 10 pcs$1.24718
- 100 pcs$0.97016
- 500 pcs$0.78559
- 1,000 pcs$0.66255
- Bilang ng Bahagi:
- IRLI640GPBF
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 9.9A TO220FP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - RF, Mga Transistor - JFET, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction, Diode - Zener - Single and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix IRLI640GPBF electronic components. IRLI640GPBF can be shipped within 24 hours after order. If you have any demands for IRLI640GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLI640GPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRLI640GPBF
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 200V 9.9A TO220FP
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4V, 5V
Rds On (Max) @ Id, Vgs :
180 mOhm @ 5.9A, 5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
40W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220-3
Pakete / Kaso :
TO-220-3 Full Pack, Isolated Tab
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