IXTQ26N60P Pagpepresyo (USD) [17686pcs Stock]
- 1 pcs$2.69315
- 30 pcs$2.67975
- Bilang ng Bahagi:
- IXTQ26N60P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 26A TO-3P.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Single, Mga Transistor - JFET, Diode - Zener - Single, Thyristors - SCR - Mga Module and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTQ26N60P electronic components. IXTQ26N60P can be shipped within 24 hours after order. If you have any demands for IXTQ26N60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTQ26N60P Mga katangian ng produkto
Bilang ng Bahagi :
IXTQ26N60P
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 600V 26A TO-3P
Serye :
PolarHV™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
26A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
270 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
460W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-3P
Pakete / Kaso :
TO-3P-3, SC-65-3
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