Vishay Semiconductor Diodes Division - V12P10HE3/86A

KEY Part #: K6448682

[999pcs Stock]


    Bilang ng Bahagi:
    V12P10HE3/86A
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    DIODE SCHOTTKY 100V 12A TO277A.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Thyristors - Mga SCR and Transistor - Mga FET, MOSFET - Single ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division V12P10HE3/86A electronic components. V12P10HE3/86A can be shipped within 24 hours after order. If you have any demands for V12P10HE3/86A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    V12P10HE3/86A Mga katangian ng produkto

    Bilang ng Bahagi : V12P10HE3/86A
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : DIODE SCHOTTKY 100V 12A TO277A
    Serye : eSMP®, TMBS®
    Katayuan ng Bahagi : Obsolete
    Uri ng Diode : Schottky
    Boltahe - DC Reverse (Vr) (Max) : 100V
    Kasalukuyang - Average na Rectified (Io) : 12A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 700mV @ 12A
    Bilis : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : -
    Kasalukuyang - Reverse Leakage @ Vr : 250µA @ 100V
    Capacitance @ Vr, F : -
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : TO-277, 3-PowerDFN
    Package ng Tagabigay ng Device : TO-277A (SMPC)
    Operating temperatura - Junction : -40°C ~ 150°C