BAS516,H3F Pagpepresyo (USD) [3056256pcs Stock]
- 1 pcs$0.01210
- Bilang ng Bahagi:
- BAS516,H3F
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- DIODE GEN PURP 100V 250MA ESC. Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Thyristors - SCR - Mga Module, Transistor - Espesyal na Pakay, Thyristors - DIACs, SIDACs and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage BAS516,H3F electronic components. BAS516,H3F can be shipped within 24 hours after order. If you have any demands for BAS516,H3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS516,H3F Mga katangian ng produkto
Bilang ng Bahagi :
BAS516,H3F
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
DIODE GEN PURP 100V 250MA ESC
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
100V
Kasalukuyang - Average na Rectified (Io) :
250mA
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.25V @ 150mA
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
3ns
Kasalukuyang - Reverse Leakage @ Vr :
200nA @ 80V
Capacitance @ Vr, F :
0.35pF @ 0V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SC-79, SOD-523
Package ng Tagabigay ng Device :
ESC
Operating temperatura - Junction :
150°C (Max)
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA
-
BAT54T
ON Semiconductor
DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE
-
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode
-
BAS116E6433HTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
-
-
BAL99E6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
Mga Mainit na Bahagi
- BYV29B-600PJ
- RL104-N-2-3-AP
- 1N3172A
- CMSH2-40M BK
- VI30120SGHM3/4W
- JAN1N1614R
- 1N4946GP-M3/54
- UES2605R
- CD214B-F3150
- SB340S-E3/54
- DSR01S30SC(TPL3)
- RGP02-16EHE3/53
- ES3GHE3/57T
- UF8CT-E3/4W
- S1DA-E3/5AT
- 1N4446_T50R
- HFA08TB60STRR
- PR3005-T
- PR2006G-T
- STTH20R04W
- SIDC73D170E6X1SA2
- CD214A-B240LF
- 10WQ045FN
- MA2711100L
- MMBD914-7
- 10ETF02STRL
- IRKE91/04A
- 30EPF12
- 20ETF02
- BAT42W-7
- SM4933A-TP
- FR154S-TP
- FR604-AP
- GIB1403-E3/81
- SE40PGHM3_A/H
- RN 1ZV
- CDBB3150-G
- PMEG2010AET,215
- 1N4005GPE-E3/54
- BAS16WF