IXGK35N120BD1 Pagpepresyo (USD) [6461pcs Stock]
- 1 pcs$6.71477
- 25 pcs$6.68136
- Bilang ng Bahagi:
- IXGK35N120BD1
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- IGBT 1200V 70A 350W TO264AA.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Thyristors - Mga SCR, Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXGK35N120BD1 electronic components. IXGK35N120BD1 can be shipped within 24 hours after order. If you have any demands for IXGK35N120BD1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGK35N120BD1 Mga katangian ng produkto
Bilang ng Bahagi :
IXGK35N120BD1
Tagagawa :
IXYS
Paglalarawan :
IGBT 1200V 70A 350W TO264AA
Serye :
HiPerFAST™
Katayuan ng Bahagi :
Active
Uri ng IGBT :
-
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
70A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
140A
Vce (on) (Max) @ Vge, Ic :
3.3V @ 15V, 35A
Kapangyarihan - Max :
350W
Paglipat ng Enerhiya :
3.8mJ (off)
Uri ng input :
Standard
Gate Charge :
170nC
Td (on / off) @ 25 ° C :
50ns/180ns
Kondisyon ng Pagsubok :
960V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr) :
60ns
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-264-3, TO-264AA
Package ng Tagabigay ng Device :
TO-264 (IXGK)
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