IXFP38N30X3M Pagpepresyo (USD) [22265pcs Stock]
- 1 pcs$1.85094
- Bilang ng Bahagi:
- IXFP38N30X3M
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- FET N-CHANNEL.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Diode - Rectifiers - Arrays and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFP38N30X3M electronic components. IXFP38N30X3M can be shipped within 24 hours after order. If you have any demands for IXFP38N30X3M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFP38N30X3M Mga katangian ng produkto
Bilang ng Bahagi :
IXFP38N30X3M
Tagagawa :
IXYS
Paglalarawan :
FET N-CHANNEL
Serye :
HiPerFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
300V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
38A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 15V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
2440pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
34W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220 Isolated Tab
Pakete / Kaso :
TO-220-3 Full Pack, Isolated Tab
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