DMTH6016LFVW-7 Pagpepresyo (USD) [325631pcs Stock]
- 1 pcs$0.11359
- Bilang ng Bahagi:
- DMTH6016LFVW-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET BVDSS 41V-60V POWERDI333.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga module ng Power driver, Transistor - Programmable Unijunction, Diode - Rectifiers - Single and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMTH6016LFVW-7 electronic components. DMTH6016LFVW-7 can be shipped within 24 hours after order. If you have any demands for DMTH6016LFVW-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6016LFVW-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMTH6016LFVW-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET BVDSS 41V-60V POWERDI333
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
41A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15.1nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
939pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
1.2W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount, Wettable Flank
Package ng Tagabigay ng Device :
PowerDI3333-8
Pakete / Kaso :
8-PowerVDFN
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