Bilang ng Bahagi :
IPL65R1K0C6SATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 8TSON
Katayuan ng Bahagi :
Active
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
328pF @ 100V
Power Dissipation (Max) :
34.7W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Thin-PAK (5x6)
Pakete / Kaso :
8-PowerTDFN