Infineon Technologies - IPL65R1K0C6SATMA1

KEY Part #: K6420129

IPL65R1K0C6SATMA1 Pagpepresyo (USD) [162824pcs Stock]

  • 1 pcs$0.22716
  • 5,000 pcs$0.20836

Bilang ng Bahagi:
IPL65R1K0C6SATMA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 8TSON.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Thyristors - Mga TRIAC, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction and Mga Transistor - FET, MOSFET - RF ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPL65R1K0C6SATMA1 electronic components. IPL65R1K0C6SATMA1 can be shipped within 24 hours after order. If you have any demands for IPL65R1K0C6SATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPL65R1K0C6SATMA1 Mga katangian ng produkto

Bilang ng Bahagi : IPL65R1K0C6SATMA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 8TSON
Serye : CoolMOS™ C6
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4.2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 328pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 34.7W (Tc)
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : Thin-PAK (5x6)
Pakete / Kaso : 8-PowerTDFN