Vishay Semiconductor Diodes Division - EGP31B-E3/D

KEY Part #: K6440291

EGP31B-E3/D Pagpepresyo (USD) [247410pcs Stock]

  • 1 pcs$0.14950

Bilang ng Bahagi:
EGP31B-E3/D
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 3A DO201AD. Rectifiers 3A,100V,50NS
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays, Mga Transistor - JFET, Diode - Mga Rectifier ng Bridge, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division EGP31B-E3/D electronic components. EGP31B-E3/D can be shipped within 24 hours after order. If you have any demands for EGP31B-E3/D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGP31B-E3/D Mga katangian ng produkto

Bilang ng Bahagi : EGP31B-E3/D
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 100V 3A DO201AD
Serye : SUPERECTIFIER®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 950mV @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 100V
Capacitance @ Vr, F : 117pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-201AD, Axial
Package ng Tagabigay ng Device : DO-201AD
Operating temperatura - Junction : -65°C ~ 175°C

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