[12264pcs Stock]
- Bilang ng Bahagi:
- STS1HNK60
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 300MA 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay, Diode - RF, Thyristors - Mga TRIAC, Thyristors - Mga SCR, Mga module ng Power driver and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STS1HNK60 electronic components. STS1HNK60 can be shipped within 24 hours after order. If you have any demands for STS1HNK60, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STS1HNK60 Mga katangian ng produkto
Bilang ng Bahagi :
STS1HNK60
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 600V 300MA 8-SOIC
Serye :
SuperMESH™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
300mA (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.5 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
156pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Tc)
Temperatura ng pagpapatakbo :
-65°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SO
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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