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  1. Bahay
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  4. Transistor - Mga FET, MOSFET - Single
  5. FDB16AN08A0

ON Semiconductor - FDB16AN08A0

KEY Part #: K6392723

FDB16AN08A0 Pagpepresyo (USD) [74271pcs Stock]

  • 1 pcs$0.52910
  • 800 pcs$0.52646
Bilang ng Bahagi:
FDB16AN08A0
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET N-CH 75V 58A TO-263AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Mga Transistor - JFET, Thyristors - SCR - Mga Module, Diode - Zener - Arrays, Transistor - Programmable Unijunction and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FDB16AN08A0 electronic components. FDB16AN08A0 can be shipped within 24 hours after order. If you have any demands for FDB16AN08A0, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB16AN08A0 Mga katangian ng produkto

Bilang ng Bahagi : FDB16AN08A0
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET N-CH 75V 58A TO-263AB
Serye : PowerTrench®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 75V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 9A (Ta), 58A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 16 mOhm @ 58A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1857pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 135W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : D²PAK
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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