[3905pcs Stock]
- Bilang ng Bahagi:
- TPC8211(TE12L,Q,M)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 5.5A SOP8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TPC8211(TE12L,Q,M) electronic components. TPC8211(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for TPC8211(TE12L,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8211(TE12L,Q,M) Mga katangian ng produkto
Bilang ng Bahagi :
TPC8211(TE12L,Q,M)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET 2N-CH 30V 5.5A SOP8
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.5A
Rds On (Max) @ Id, Vgs :
36 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1250pF @ 10V
Kapangyarihan - Max :
450mW
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.173", 4.40mm Width)
Package ng Tagabigay ng Device :
8-SOP (5.5x6.0)
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