Infineon Technologies - DF23MR12W1M1B11BPSA1

KEY Part #: K6522773

DF23MR12W1M1B11BPSA1 Pagpepresyo (USD) [945pcs Stock]

  • 1 pcs$49.10844

Bilang ng Bahagi:
DF23MR12W1M1B11BPSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET MOD 1200V 25A.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Single, Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Arrays, Thyristors - Mga SCR, Diode - RF, Transistor - Programmable Unijunction and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies DF23MR12W1M1B11BPSA1 electronic components. DF23MR12W1M1B11BPSA1 can be shipped within 24 hours after order. If you have any demands for DF23MR12W1M1B11BPSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DF23MR12W1M1B11BPSA1 Mga katangian ng produkto

Bilang ng Bahagi : DF23MR12W1M1B11BPSA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET MOD 1200V 25A
Serye : CoolSiC™
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Silicon Carbide (SiC)
Drain sa Source Voltage (Vdss) : 1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 25A (Tj)
Rds On (Max) @ Id, Vgs : 45 mOhm @ 25A, 15V (Typ)
Vgs (th) (Max) @ Id : 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 1840pF @ 800V
Kapangyarihan - Max : 20mW
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Module
Package ng Tagabigay ng Device : AG-EASY1BM-2

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