TK160F10N1L,LQ Pagpepresyo (USD) [69651pcs Stock]
- 1 pcs$0.56138
- Bilang ng Bahagi:
- TK160F10N1L,LQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Mga Rectifier ng Bridge, Transistor - Programmable Unijunction, Diode - RF, Mga Transistor - FET, MOSFET - RF, Transistor - Espesyal na Pakay and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK160F10N1L,LQ electronic components. TK160F10N1L,LQ can be shipped within 24 hours after order. If you have any demands for TK160F10N1L,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK160F10N1L,LQ Mga katangian ng produkto
Bilang ng Bahagi :
TK160F10N1L,LQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
X35 PB-F POWER MOSFET TRANSISTOR
Serye :
U-MOSVIII-H
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
160A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.4 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
122nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
10100pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
375W (Tc)
Temperatura ng pagpapatakbo :
175°C
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-220SM(W)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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