TPH3207WS Pagpepresyo (USD) [2717pcs Stock]
- 1 pcs$14.57542
- 10 pcs$13.48249
- 100 pcs$11.51458
- Bilang ng Bahagi:
- TPH3207WS
- Tagagawa:
- Transphorm
- Detalyadong Paglalarawan:
- GANFET N-CH 650V 50A TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Mga Transistor - JFET, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Thyristors - Mga TRIAC, Transistor - Espesyal na Pakay and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Transphorm TPH3207WS electronic components. TPH3207WS can be shipped within 24 hours after order. If you have any demands for TPH3207WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH3207WS Mga katangian ng produkto
Bilang ng Bahagi :
TPH3207WS
Tagagawa :
Transphorm
Paglalarawan :
GANFET N-CH 650V 50A TO247
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
N-Channel
Teknolohiya :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
50A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
41 mOhm @ 32A, 8V
Vgs (th) (Max) @ Id :
2.65V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 8V
Vgs (Max) :
±18V
Input Capacitance (Ciss) (Max) @ Vds :
2197pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
178W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247-3
Pakete / Kaso :
TO-247-3
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