Taiwan Semiconductor Corporation - S3M M6G

KEY Part #: K6458191

S3M M6G Pagpepresyo (USD) [948493pcs Stock]

  • 1 pcs$0.03900

Bilang ng Bahagi:
S3M M6G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 3A DO214AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - JFET, Diode - Mga Rectifier ng Bridge, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation S3M M6G electronic components. S3M M6G can be shipped within 24 hours after order. If you have any demands for S3M M6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S3M M6G Mga katangian ng produkto

Bilang ng Bahagi : S3M M6G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 3A DO214AB
Serye : -
Katayuan ng Bahagi : Not For New Designs
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : -
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.15V @ 3A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 1.5µs
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 1000V
Capacitance @ Vr, F : 30pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AB, SMC
Package ng Tagabigay ng Device : DO-214AB (SMC)
Operating temperatura - Junction : -55°C ~ 150°C

Maaari ka ring Makisalamuha sa
  • 1SS250(TE85L,F)

    Toshiba Semiconductor and Storage

    DIODE GEN PURP 200V 100MA SC59. Diodes - General Purpose, Power, Switching 0.1A 200V Switching Diode S-Mini High

  • SE30AFG-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.4A DO221AC. Rectifiers 3.0A, 400V, ESD PROTECTION, SLIM SMA

  • SE30AFD-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1.4A DO221AC. Rectifiers 3.0A, 200V, ESD PROTECTION, SLIM SMA

  • SE30AFB-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 1.4A DO221AC. Rectifiers 3 Amp 100 volts ESD PROTECTION 13in

  • SE20AFJ-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 1.3A DO221AC. Rectifiers 2 Amp 600 volts ESD PROTECTION 13in

  • SE20AFGHM3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1.3A DO221AC. Rectifiers 2 Amp 400 volts ESD PROTECTION 13in