1N6483-E3/97 Pagpepresyo (USD) [1025340pcs Stock]
- 1 pcs$0.03807
- 10,000 pcs$0.03788
- Bilang ng Bahagi:
- 1N6483-E3/97
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 800V 1A DO213AB. Rectifiers 800 Volt 1.0 Amp 30 Amp IFSM
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - IGBTs - Arrays, Mga module ng Power driver, Diode - Zener - Arrays, Transistor - IGBTs - Mga Module, Thyristors - DIACs, SIDACs, Diode - RF and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division 1N6483-E3/97 electronic components. 1N6483-E3/97 can be shipped within 24 hours after order. If you have any demands for 1N6483-E3/97, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N6483-E3/97 Mga katangian ng produkto
Bilang ng Bahagi :
1N6483-E3/97
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 800V 1A DO213AB
Serye :
SUPERECTIFIER®
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
800V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.1V @ 1A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 800V
Capacitance @ Vr, F :
8pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-213AB, MELF (Glass)
Package ng Tagabigay ng Device :
DO-213AB
Operating temperatura - Junction :
-65°C ~ 175°C
Pinakabagong Balita
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