Infineon Technologies - SPP11N80C3XKSA1

KEY Part #: K6417264

SPP11N80C3XKSA1 Pagpepresyo (USD) [27999pcs Stock]

  • 1 pcs$1.24277
  • 10 pcs$1.06657
  • 100 pcs$0.85711
  • 500 pcs$0.66665
  • 1,000 pcs$0.55237

Bilang ng Bahagi:
SPP11N80C3XKSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 800V 11A TO-220AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
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Kumpetensyang Pakinabang:
We specialize in Infineon Technologies SPP11N80C3XKSA1 electronic components. SPP11N80C3XKSA1 can be shipped within 24 hours after order. If you have any demands for SPP11N80C3XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPP11N80C3XKSA1 Mga katangian ng produkto

Bilang ng Bahagi : SPP11N80C3XKSA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 800V 11A TO-220AB
Serye : CoolMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 11A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 450 mOhm @ 7.1A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs : 85nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 156W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : PG-TO220-3-1
Pakete / Kaso : TO-220-3

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