SISF00DN-T1-GE3 Pagpepresyo (USD) [134082pcs Stock]
- 1 pcs$0.27586
- Bilang ng Bahagi:
- SISF00DN-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET DUAL N-CH 30V POWERPAK 12.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Thyristors - SCR - Mga Module, Thyristors - Mga SCR, Diode - Mga Rectifier ng Bridge, Diode - Zener - Arrays, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SISF00DN-T1-GE3 electronic components. SISF00DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISF00DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISF00DN-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SISF00DN-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET DUAL N-CH 30V POWERPAK 12
Serye :
TrenchFET® Gen IV
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Common Drain
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
60A (Tc)
Rds On (Max) @ Id, Vgs :
5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 15V
Kapangyarihan - Max :
69.4W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
PowerPAK® 1212-8SCD
Package ng Tagabigay ng Device :
PowerPAK® 1212-8SCD
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