[13147pcs Stock]
- Bilang ng Bahagi:
- IXFN66N50Q2
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 500V 66A SOT-227B.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays, Diode - Rectifiers - Arrays, Transistors - IGBTs - Single, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Espesyal na Pakay and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFN66N50Q2 electronic components. IXFN66N50Q2 can be shipped within 24 hours after order. If you have any demands for IXFN66N50Q2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN66N50Q2 Mga katangian ng produkto
Bilang ng Bahagi :
IXFN66N50Q2
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 500V 66A SOT-227B
Serye :
HiPerFET™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
66A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
199nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
735W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SOT-227B
Pakete / Kaso :
SOT-227-4, miniBLOC
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