[4005pcs Stock]
- Bilang ng Bahagi:
- IRFHM8363TR2PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 11A 8PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Arrays, Mga module ng Power driver and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFHM8363TR2PBF electronic components. IRFHM8363TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFHM8363TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8363TR2PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFHM8363TR2PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 30V 11A 8PQFN
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A
Rds On (Max) @ Id, Vgs :
14.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1165pF @ 10V
Kapangyarihan - Max :
2.7W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
8-PQFN (3.3x3.3), Power33
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