ZXMN6A09DN8TA Pagpepresyo (USD) [73350pcs Stock]
- 1 pcs$0.53308
- 500 pcs$0.48291
- Bilang ng Bahagi:
- ZXMN6A09DN8TA
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 4.3A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays, Diode - RF, Transistor - IGBTs - Mga Module, Mga Transistor - JFET, Thyristors - Mga SCR, Thyristors - DIACs, SIDACs and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated ZXMN6A09DN8TA electronic components. ZXMN6A09DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN6A09DN8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN6A09DN8TA Mga katangian ng produkto
Bilang ng Bahagi :
ZXMN6A09DN8TA
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 60V 4.3A 8-SOIC
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.3A
Rds On (Max) @ Id, Vgs :
40 mOhm @ 8.2A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
24.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
1407pF @ 40V
Kapangyarihan - Max :
1.25W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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