SI8469DB-T2-E1 Pagpepresyo (USD) [3004pcs Stock]
- 3,000 pcs$0.07418
- Bilang ng Bahagi:
- SI8469DB-T2-E1
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET P-CH 8V 3.6A MICRO.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Single, Diode - Zener - Arrays, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI8469DB-T2-E1 electronic components. SI8469DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8469DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8469DB-T2-E1 Mga katangian ng produkto
Bilang ng Bahagi :
SI8469DB-T2-E1
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET P-CH 8V 3.6A MICRO
Serye :
TrenchFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
8V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.6A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
64 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 4.5V
Vgs (Max) :
±5V
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 4V
Tampok ng FET :
-
Power Dissipation (Max) :
780mW (Ta), 1.8W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-Microfoot
Pakete / Kaso :
4-UFBGA
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