[13836pcs Stock]
- Bilang ng Bahagi:
- FDD2612
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 4.9A D-PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Diode - Zener - Single, Diode - Zener - Arrays, Mga module ng Power driver and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDD2612 electronic components. FDD2612 can be shipped within 24 hours after order. If you have any demands for FDD2612, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD2612 Mga katangian ng produkto
Bilang ng Bahagi :
FDD2612
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 200V 4.9A D-PAK
Serye :
PowerTrench®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.9A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
720 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
234pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
42W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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